Display device

ABSTRACT

A display device is provided. The display device includes a substrate and a plurality of pixels disposed on the substrate. One of the pixels includes a first light filter layer. The display device also includes a first light shielding layer, a second light shielding layer, and a plurality of light emitting diodes. The first light shielding layer defines a plurality of openings, wherein the first light filter layer is disposed in one of the openings. The second light shielding layer is disposed on the substrate and at least partially overlapped with the first light shielding layer. The second light shielding layer defines another plurality of openings, and the light emitting diodes are disposed in the another plurality of openings. In a direction parallel to an upper surface of the substrate, the second light shielding layer overlaps the plurality of light emitting diodes.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of application Ser. No. 17/034,935,filed Sep. 28, 2020, now U.S. Pat. No. 11,378,843, which is aContinuation of application Ser. No. 16/027,908, filed Jul. 5, 2018, nowabandoned, which claims priority of a provisional application of U.S.Patent Application No. 62/539,579 filed on Aug. 1, 2017, and also claimspriority of China Patent Application No. 201810146834.1 filed on Feb.12, 2018, the entirety of which is incorporated by reference herein.

BACKGROUND OF THE INVENTION Field of the Invention

The embodiments of the disclosure relate to a display device, and inparticular to a display device having high penetration or wide colorgamut.

Description of the Red Pixel Related Art

As digital technology develops, display devices are being used morewidely. For example, display devices have been applied in moderninformation and communication devices such as televisions, notebooks,computers, mobile phones or smartphones. In addition, each generation ofdisplay devices has been developed to be thinner, lighter, less, or morefashionable than the previous generation, high luminance or high chroma.These display devices include light-emitting diode display devices.

Since mass production has recently become a trend in the display deviceindustry, any increase in the yield of manufacturing display deviceswill reduce costs or result in huge economic benefits. However, existingdisplay devices have not been satisfactory in every respect.

Therefore, an uncomplicated, cost-effective process for manufacturingdisplay devices with high-quality luminance or high color gamut isneeded.

BRIEF SUMMARY OF THE INVENTION

The embodiments of the present disclosure provide a display device. Thedisplay device includes a substrate and a plurality of pixels disposedon the substrate. One of the pixels includes a first light filter layer.The display device also includes a first light shielding layer, a secondlight shielding layer, and a plurality of light emitting diodes. Thefirst light shielding layer defines a plurality of openings, wherein thefirst light filter layer is disposed in one of the openings. The secondlight shielding layer is disposed on the substrate and at leastpartially overlapped with the first light shielding layer. The secondlight shielding layer defines another plurality of openings, and thelight emitting diodes are disposed in the another openings. In adirection parallel to an upper surface of the substrate, the secondlight shielding layer overlaps the plurality of light emitting diodes.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1 is a cross-sectional view of a display device in accordance withsome embodiments of the present disclosure;

FIG. 2 is a cross-sectional view of a light-emitting element inaccordance with some embodiments of the present disclosure;

FIG. 3 is a graph of transmittance against wavelength of light passingthrough a red, a green and a yellow filter layer, according to someembodiments;

FIG. 4 is a cross-sectional view of a display device in accordance withsome embodiments of the present disclosure;

FIG. 5 is a cross-sectional view of a display device in accordance withsome embodiments of the present disclosure;

FIG. 6 is a cross-sectional view of a liquid-crystal substrate shown inFIG. 5 in accordance with some embodiments of the present disclosure;

FIGS. 7-17 are cross-sectional views of a display device in accordancewith some embodiments of the present disclosure;

FIGS. 18A and 18B are cross-sectional views of a process for forming alayer film between the spacer layers in accordance with some embodimentsof the present disclosure;

FIGS. 19A-19C are cross-sectional views of a process for forming amaterial layer between the spacer layers in accordance with someembodiments of the present disclosure;

FIGS. 20A and 20B are cross-sectional views of a process for forming amaterial layer between the spacer layers in accordance with someembodiments of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

The display device of the present disclosure is described in detail inthe following description. The specific elements and configurationsdescribed in the following detailed description are set forth in orderto clearly describe the present disclosure. It will be apparent,however, that the exemplary embodiments set forth herein are used merelyfor the purpose of illustration, and the inventive concept may beembodied in various forms without being limited to those exemplaryembodiments. In addition, the drawings of different embodiments may uselike and/or corresponding numerals to denote like and/or correspondingelements in order to clearly describe the present disclosure. However,the use of like and/or corresponding numerals in the drawings ofdifferent embodiments does not suggest any correlation between differentembodiments. In addition, in this specification, expressions such as“first material layer disposed on/over a second material layer”, mayindicate the direct contact of the first material layer and the secondmaterial layer, or it may indicate a non-contact state with one or moreintermediate layers between the first material layer and the secondmaterial layer. In the above situation, the first material layer may notbe in direct contact with the second material layer.

It should be noted that the elements or devices in the drawings of thepresent disclosure may be present in any form or configuration known tothose skilled in the art. In addition, the expression “a layer overlyinganother layer”, “a layer is disposed above another layer”, “a layer isdisposed on another layer” and “a layer is disposed over another layer”may indicate that the layer is in direct contact with the other layer,or that the layer is not in direct contact with the other layer, therebeing one or more intermediate layers disposed between the layer and theother layer.

The terms “about” and “substantially” typically mean+/−20% of the statedvalue, more typically +/−10% of the stated value, more typically +/−5%of the stated value, more typically +/−3% of the stated value, moretypically +/−2% of the stated value, more typically +/−1% of the statedvalue and even more typically +/−0.5% of the stated value. The statedvalue of the present disclosure is an approximate value. When there isno specific description, the stated value includes the meaning of“about” or “substantially”.

It should be understood that, although the terms first, second, thirdetc. may be used herein to describe various elements, components,regions, layers, portions and/or sections, these elements, components,regions, layers, portions and/or sections should not be limited by theseterms. These terms are only used to distinguish one element, component,region, layer, portion or section from another region, layer or section.Thus, a first element, component, region, layer, portion or sectiondiscussed below could be termed a second element, component, region,layer, portion or section without departing from the teachings of thepresent disclosure.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

This description of the exemplary embodiments is intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. The drawings are not drawn toscale. In addition, structures and devices are shown schematically inorder to simplify the drawing.

The term “substrate” is meant to include devices formed within asubstrate or the layers overlying the substrate. All transistor elementneeded may be already formed over the substrate. However, the substrateis represented with a flat surface in order to simplify the drawing. Theterm “substrate surface” is meant to include the uppermost exposedlayers on a substrate, such as an insulating layer and/or metallurgylines.

The thickness of a structure described in the embodiments of thedisclosure indicates a value for the average thickness of the structureafter deleting outliers. The outliers can be the thickness of an edge,an obvious micro-trench, or an obvious micro-raised area. After deletingthe outliers, most values of the thickness are within a range of plus orminus three standard deviations.

Referring to FIG. 1 , FIG. 1 is a cross-sectional view of a displaydevice 100A in accordance with some embodiments of the presentdisclosure. As shown in FIG. 1 , the display device 100A includes a bluepixel B, a green pixel G, and a red pixel R, which emit differentwavelength of light respectively. In some embodiments, the displaydevice 100A further includes, but is not limited to, other pixels suchas an infrared pixel or a white pixel.

In some embodiments, the display device 100A includes a substrate 102.The substrate 102 may be used as a protective element or a packageelement of the display device 100A to prevent material layers orelements such as light filter layer, dielectric layer, color conversionlayer or display layer from physical or chemical damage. The substrate102 may include, but is not limited to, a transparent substrate such asa glass substrate, a ceramic substrate, a plastic substrate or anotherapplicable substrate. In addition, the substrate 102 may includephosphosilicate glass (PSG), borophosphosilicate glass (BPSG), siliconoxide, silicon nitride, silicon oxynitride, high-k material, any otherapplicable dielectric material, and a combination thereof. The high-kmaterial refers to a material with a high dielectric constant and it mayinclude, but is not limited to, metal oxide, metal nitride, metalsilicide, transition metal oxide, transition metal nitride, transitionmetal silicide, transition metal oxynitride, metal aluminate, zirconiumsilicate, or zirconium aluminate.

In some embodiments, the display device 100A includes a light shieldinglayer 104. The light shielding layer 104 is disposed on the substrate102 and between two adjacent pixels. As shown in FIG. 1 , the patternedlight shielding layer 104 defines a plurality of openings which candifferentiate or define different pixels such as the blue pixel B, thegreen pixel G and the red pixel R. The light shielding layer 104 is usedto shield the elements or region which is not used to display colors inthe display device 100A. For example, the light shielding layer 104 maybe used to shield the data lines or scan lines. The light shieldinglayer 104 may include, but is not limited to, black photoresist, blackprinting ink, black resin or any other suitable light-shieldingmaterials or light-shielding colors. Generally, the light-shieldingmaterials may prevent light from being transmitted, but it is notlimited to the absorption of light. The light-shielding materials mayalso be highly reflective. For example, the light-shielding materialsare white or highly reflective, and are not limited to consisting of onematerial. In some embodiments, the light shielding layers 104 have anouter portion and an inner portion covered by the outer portion. Forexample, the outer portion may be made of a highly reflective material(such as a metal or a white ink) or a highly absorptive material (suchas a black ink or a black photoresist), and the inner portion is, but isnot limited to, multiple layers structure made of transparent or othermaterials.

In some embodiments, as shown in FIG. 1 , the plurality of pixels, suchas the blue pixel B, the green pixel G and the red pixel R, includes acolor conversion layer or a light filter layer, respectively. Forexample, a blue light filter layer 106 and a blue color conversion layer108 disposed on the blue light filter layer 106 are formed in the bluepixel B, a yellow light filter layer 110 and a green color conversionlayer 112 disposed on the yellow light filter layer 110 are formed inthe green pixel G, and a yellow light filter layer 114 and a red colorconversion layer 116 disposed on the yellow light filter layer 114 areformed in the red pixel R.

The light filter layer may allow specific wavelength of light to passthrough. For example, the blue light filter layer allows wavelength oflight between about 400 nm and 500 nm to pass through, the yellow lightfilter layer allows wavelength of light between about 500 nm and 570 nmto pass through, and the red light filter layer allows wavelength oflight between about 620 nm and 750 nm to pass through. Theaforementioned light filter layer and corresponding wavelength of lightare merely example and not limited, and the scope of disclosure is notintended to be limiting.

In some embodiments, as shown in FIG. 1 , the yellow light filter layer110 and the yellow light filter layer 114 are disposed in the greenpixel G and the red pixel R, respectively. The yellow light filter layer110 and the yellow light filter layer 114 may be formed in the sameprocess or different processes. When the yellow light filter layer 110and the yellow light filter layer 114 are formed in different processes,the thickness of the yellow light filter layer 110 and the yellow lightfilter layer 114 may be different. Referring to FIG. 3 , FIG. 3 is agraph of transmittance against wavelength of light passing through ared, a green or a yellow filter layer, according to some embodiments.Waveband 302 means that a spectra of transmittance against wavelength oflight passing through the yellow filter layer, waveband 304 means that aspectra of transmittance against wavelength of light passing through thegreen filter layer, and waveband 306 means that a spectra oftransmittance against wavelength of light passing through the red filterlayer. As shown in FIG. 3 , the transmittance of the yellow filter layeris greater than 95% in wavelength between about 500 nm and 780 nm. Thetransmittance of the green filter layer in wavelength between about 500nm and 570 nm is less than that of the yellow filter layer. Therefore,the light-emitting efficiency of the green pixel is enhanced byreplacing the green light filter with the yellow filter layer.

Moreover, as shown in FIG. 3 , the transmittance of light passingthrough the yellow filter layer in wavelength between about 620 nm and750 nm is substantially equivalent to the transmittance of light passingthrough the red filter layer, and keeps in 95% in wavelength betweenabout 620 nm and 750 nm. Therefore, the red filter layer may be replacedwith the yellow filter layer. By disposing the yellow filter layer inthe green pixel G or the red pixel R, the light-emitting efficiency isenhanced. Moreover, since the process for forming the display device100A is simplified (e.g. two processes of disposing red filter layer andthe green filter layer are replaced with one process of disposing theyellow filter layers), the cost or the production time are reduced.

In some embodiments, as shown in FIG. 1 , the blue color conversionlayer 108 is correspondingly formed in the blue pixel B, the green colorconversion layer 112 is correspondingly formed in the green pixel G, andthe red color conversion layer 116 is correspondingly formed in the redpixel R. The material of the blue color conversion layer 108, the greencolor conversion layer 112 and the red color conversion layer 116include, but are not limited to, a quantum dot film, a fluorescentmaterial, or other light conversion materials. For example, the bluecolor conversion layer 108, the green color conversion layer 112 and thered color conversion layer 116 are organic or inorganic layers, whichmixed with a quantum dot. The quantum dot may include, but is notlimited to, zinc, cadmium, selenium, sulfur, InP, GaSb, GaAa or acombination thereof. The grain diameter of the quantum dot may rangefrom about 1 nm-30 nm. When the quantum dots with different graindiameter are excited, the spectrum of light is altered and differentwavelength of light is emitted. For example, the excitation of thequantum dots with smaller grain diameter results in emitting shorterwavelength of light (such blue light), the excitation of the quantumdots with greater grain diameter results in emitting longer wavelengthof light (such red light). Therefore, by adjusting the grain diameter ofthe quantum dot, different wavelength of light are generated and therebya display device with wide color gamut is achieved. For example, theblue color conversion layer 108 mixed with a quantum dot having thefirst grain diameter may emit light of a blue color after excitation.The green color conversion layer 112 mixed with a quantum dot having thesecond grain diameter may emit light of a green color after excitation.The red color conversion layer 116 mixed with a quantum dot having thethird grain diameter may emit light of a red color after excitation. Insome embodiments, the color conversion layer is an organic layer or aninorganic layer mixed or mixed with perovskite. In some embodiments, thecolor conversion layer is a fluorescent material such as a materialabsorbing shorter wavelength of light and emitting longer wavelength oflight.

In some embodiments, the display device 100A further includes a colorconversion enhancement layer (not shown). The color conversionenhancement layer may be disposed between the light filter layer and thecolor conversion layer. The color conversion enhancement layer mayinclude, but is not limited to, a material reflecting blue light.Unexcited blue light may be reflected back to the blue color conversionlayer 108, the green color conversion layer 112 or the red colorconversion layer 116 by the color conversion enhancement layer, andthereby the blue light without conversion can excite through the bluecolor conversion layer 108, the green color conversion layer 112 or thered color conversion layer 116. As a result, the efficiency of lighttransformation is enhanced.

As shown in FIG. 1 , the display device 100A includes an adhesive layer118. The adhesive layer 118 is used to attach the light-emitting elementor a substrate having a light-emitting display layer. The material ofthe adhesive layer light-emitting layer 126 includes, but is not limitedto, optical adhesive (OCA), optical clear resin (OCR) or other suitabletransparent adhesive materials, or a combination thereof.

As shown in FIG. 1 , the display device 100A includes a light shieldinglayer 120. The light shielding layer 120 substantially overlaps thelight shielding layer 104, that is to say, the light shielding layer 120and the light shielding 140 may be separated via an intermediate layer(e.g. the adhesive layer 118, a dielectric layer 148, or a spacer layer154 discussed below), but the present disclosure is not limited thereto.For example, the light shielding layer 120 can completely or partiallyoverlap with the light shielding layer 104. The light shielding layer120 defines a plurality of openings. At least one light-emitting diode122 is disposed in the opening. In some embodiments, the material of thelight shielding layer 120 is the same as or similar to that of the lightshielding layer 104. In some embodiments, the material of the lightshielding layer 120 is different from the light shielding layer 104. Insome embodiments, from a cross-sectional view, the shape of the lightshielding layer 120 is trapezoidal, rectangular, arc-shaped, othersuitable shapes, or a combination thereof.

In some embodiments, as shown in FIG. 1 , the display device 100Aincludes the light-emitting diode 122 and a substrate 137. In someembodiments, the light-emitting diodes 122 include, but are not limitedto, a quantum dot (QD), a fluorescent material, a phosphor material, alight-emitting diode (LED), a micro light-emitting diode or a minilight-emitting diode. In some embodiments, the size of the chip of thelight-emitting diode is, but is not limited to, in a range of about 300μm to 10 mm, the size of the chip of the mini light-emitting diode is,but is not limited to, in a range of about 100 μm to 300 μm, the size ofthe chip of the micro light-emitting diode is, but is not limited to, ina range of about 1 μm to 100 μm. In other embodiments, thelight-emitting diode 122 includes an organic light-emitting diode(OLED). The structure of the display device 100A can be adjusted, thescope of disclosure is not intended to be limiting.

As shown in FIG. 1 , the light-emitting diode 122 can be disposed in theblue pixel B, the green pixel G and the red pixel R, respectively. Asshown in FIG. 1 , the light-emitting diodes 122 are disposed in theopenings, which are differentiated or defined by the light shieldinglayer 120. The light-emitting diode 122 can be electrically connected tothe substrate 137 by a conductive layer 136. In some embodiments, theconductive layer 136 is a bonding material. In addition, a filler 123can be disposed between the substrate 137 and the adhesive layer 118. Insome embodiments, the filler 123 is, but is not limited to, such as atransparent material. The substrate 137 have many circuits (not shown)formed therein, the circuits include such as a thin film transistor(TFT) or other elements.

Referring to FIG. 2 , FIG. 2 is a cross-sectional view of thelight-emitting diode 122 in accordance with some embodiments of thepresent disclosure. As shown in FIG. 2 , the light-emitting diode 122includes a semiconductor layer 124, a light-emitting layer 126, and asemiconductor layer 128. The semiconductor layer 124 and thesemiconductor layer 128 connect a conductive pad 130 and a conductivepad 132, respectively. The semiconductor layer 124 and the semiconductorlayer 128 may include, but are not limited to, an element semiconductorwhich may include amorphous-Si, poly-Si, germanium; a compoundsemiconductor which may include gallium nitride (GaN), silicon carbide,gallium arsenide, gallium phosphide, indium phosphide, indium arsenideand/or indium antimonide; an alloy semiconductor which may include SiGealloy, GaAsP alloy, AlInAs alloy, AlGaAs alloy, GaInAs alloy, GaInPalloy, GaInAsP alloy, or a combination thereof. The semiconductor layer124 and the semiconductor layer 128 may also include, but are notlimited to, metal oxide such as indium gallium zinc oxide (IGZO), indiumzinc oxide (IZO), indium gallium zinc oxide (IGZTO), or organicsemiconductor including polycyclic aromatic compound, or a combinationthereof.

As shown in FIG. 2 , the light-emitting layer 126 is disposed betweenthe semiconductor layer 124 and the semiconductor layer 128. Thelight-emitting layer 126 may include, but is not limited to,homojunction, heterojunction, single-quantum well (SQW),multiple-quantum well (MQW) or any other applicable structure. In someembodiments, the light-emitting layer 126 includes un-doped n typeIn_(x)Ga_((1-x))N. In other embodiments, the light-emitting layer 126includes such materials as Al_(x)In_(y)Ga_((1-x-y))N or other materials.Moreover, the light-emitting layer 126 may include a multiple-quantumwell structure with multiple-quantum layers (such as InGaN) or barrierlayers (such as GaN) arranged alternately. Moreover, the light-emittinglayer 126 may be formed, but is not limited to, by metal organicchemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydridevapor phase epitaxy (HYPE), liquid phase epitaxy (LPE) or any otherapplicable chemical vapor deposition process.

As shown in FIG. 2 , a protective layer 134 is disposed on sidewalls ofthe semiconductor layer 124, the light-emitting layer 126, thesemiconductor layer 128, portions of the conductive pad 130 or theconductive pad 132. In some embodiments, the protective layer 134 is,but is not limited to, a reflective material or light absorptivematerial. When the protective layer 134 is the reflective material, theprotective layer 134 may include, but is not limited to, a multi-layerdielectric film of distributed Bragg reflector (DBR), a mixed layermaterial (such as a structure of dielectric layer/metal layer/dielectriclayer) or a Omni-Directional reflector (ODR). When the protective layer134 is the light absorptive material, the protective layer 134 mayinclude photoresist materials (such as a white photoresist or a blackphotoresist). It is appreciated that the protective layer 134 includesat least one insulating layer to prevent from short with other metallayers. For example, the surface of the protective layer 134 contactingthe conductive pad 130 and the conductive pad 132 is made of theinsulating layer. In some embodiments, the outside of the protectivelayer 134 is made of the insulating layer.

As shown in FIG. 2 , the conductive pad 130 is deposed adjacent to thesemiconductor layer 128, the conductive pad 132 is deposed adjacent tothe semiconductor layer 124. The material of the conductive pad 130 orthe conductive pad 132 may include, but are not limited to, copper (Cu),aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr),nickel (Ni), platinum (Pt), titanium (Ti), iridium (Ir), Rhodium (Rh),the above alloys, the above combination or any other applicablematerials.

In addition, as shown in FIG. 2 , the light-emitting diode 122 includesa conductive layer 136. The conductive layer 136 may be used toelectrically connected to the light-emitting diode 122 or a substrate(not shown) having electronic elements or circuits. The conductive layer136 may be such as a material with low melting point. In someembodiments, the conductive layer 136 is a eutectic material whosemelting point is less than 300° C. The material of the conductive layer136 may include, but is not limited to, a tin-indium alloy, a tin-zincalloy, a tin-silver alloy, a gold-indium alloy, a gold-tin alloy orother suitable materials. In some embodiments, the conductive layer 136is a stack structure with multi-layers such as a structure of Cu/Ni/Agor Cu/Ni/Pt/Au, and the scope of disclosure is not intended to belimiting.

In some embodiments, the light-emitting diode 122 is formed by aflip-chip technique. In addition, the light-emitting diode 122 may be,but is not limited to, a lateral or a vertical structure. When thelight-emitting diode 122 is the lateral structure, two electrodes aredisposed in the same side of the light-emitting diode 122. When thelight-emitting diode 122 is the vertical structure, two electrodes aredisposed in different sides of the light-emitting diode 122,respectively.

The substrate having electronic elements is such as an integratedcircuit (IC) substrate. The IC may include, but is not limited to, amicro-processor, a memory element and/or other elements. The IC may alsoinclude, but is not limited to, various passive and active elements suchas a capacitor or other type of capacitor.

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 4 , FIG. 4 is a cross-sectional view of adisplay device 100B in accordance with some embodiments of the presentdisclosure. The display device 100B may be similar to the display device100A, and one of the differences is that the blue color conversion layer108 is replaced with a filling layer 138 in the blue pixel B of thedisplay device 100B. In some embodiments, the light-emitting diode 122emits color of blue light. Therefore, the blue color conversion layer108 can be replaced with the filling layer 138. The material of thefilling layer 138 is a highly reflective material or highly diffusionalmaterial. The material of the filling layer 138 may be, but is notlimited to, such as silica gel, epoxy resin, poly(methyl methacrylate),poly(carbonate) or other composite materials.

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 5 , FIG. 5 is a cross-sectional view of adisplay device 100C in accordance with some embodiments of the presentdisclosure. The display device 100C may be similar to the display device100A, and one of the differences is that a liquid-crystal displayelement 140 is disposed under the adhesive layer 118. In someembodiments, the adhesive layer 118 is not disposed.

In some embodiments, the liquid-crystal display element 140 is anelement including liquid crystal display (LCD). The liquid-crystaldisplay element 140 at least includes a first element layer 142, adisplay layer 144 and a second element layer 146. In other embodiments,the liquid-crystal display element 140 includes other elements. Thefirst element layer 142 includes a top polarizing layer (not shown). Thetop polarizing layer is, but is not limited to, a metal periodicnanostructure formed by using nanoimprinting method. The top polarizinglayer is such as in cell (or inner) polarizer. The nanoimprinting may beformed by such as thermoplastic nanoimprint lithography, resist-freedirect thermal nanoimprint lithography or photo nanoimprint lithography.

In some embodiments, the display layer 144 is disposed between the firstelement layer 142 and the second element layer 146. The first elementlayer 142 and the second element layer 146 include some circuits orpolyimide layer (not shown). The display layer 144 utilizes theproperties of liquid-crystal molecules, which have differentpolarization or reflection effects to lights under different arrangementstates, so as to control the amounts of the transmitting lights, andthus creates images (to display different gray levels). The displaylayer 144 may be applied in different liquid-crystal mode in accordancewith the structure of the electrode or orientation of the polyimidelayer. For example, the display layer 144 may include, but is notlimited to, a twisted nematic (TN) liquid-crystal, a super twistednematic (STN) liquid-crystal, a double layer super twisted nematic(DSTN) liquid-crystal, a vertical alignment (VA) liquid-crystal, anin-plane switching (IPS) liquid-crystal, a cholesteric liquid-crystal, ablue phase liquid-crystal, a fringe-field switching (FFS)liquid-crystal, or any other suitable liquid-crystal.

In some embodiments, the second element layer 146 includes a bottompolarizing layer (not shown), wherein the display layer 144 is disposedbetween the top polarizing layer and the bottom polarizing layer. Thebottom polarizing layer may include a protective film, tri-acetatecellulose (TAC), polyvinyl alcohol (PVA), tri-acetate cellulose (TAC), apressure sensitive adhesive (PSA) or a release film. The polarizinglayer may also include a polarizing substrate (such as PVA (Polyvinylalcohol) substrate), the polarizing substrate is a transparent substratewith TAC attaching on different sides, and TAC may be used to support orprotect the polarizing substrate, or TAC may be used to reduce thepolarizing substrate from retraction. The bottom polarizing layer may bedirectly attached to the substrate (not shown) of the second elementlayer 146. By adjusting the orientation of liquid-crystal molecules ofthe display layer 144 with the penetration axis of the top polarizinglayer and the penetration axis of the bottom polarizing layer, theamounts of the transmitting lights can be controlled. In someembodiments, a backlight module (not shown) is further disposed underthe second element layer 146.

In some embodiments, the second element layer 146 may include thin filmtransistor (TFT). The electrode of the TFT may include, but is notlimited to, metal oxide such as indium tin oxide (ITO), tin oxide (SnO),indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tinzinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO),a combination thereof, or any other suitable transparent conductiveoxide.

The second element layer 146 may include substrate such as a glasssubstrate, a plastic substrate or other suitable substrate. The materialof the substrate may include, but is not limited to, glass, quartz,organic polymer, inorganic polymer or metal. The material of thesubstrate may also include, but is not limited to, silicon dioxide,phosphosilicate glass (PSG), low dielectric constant (low-k) dielectricmaterial or other suitable dielectric material. The low dielectricconstant dielectric materials include, but are not limited to,fluorinated silica glass (FSG), carbon doped silicon oxide, parylene,polyimide or a combination thereof. The second element layer 146 mayinclude, but is not limited to, gate driver circuit, data drivercircuit, demultiplexer or other elements.

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 7 , FIG. 7 is a cross-sectional view of adisplay device 100D in accordance with some embodiments of the presentdisclosure. The display device 100D may be similar to the display device100A, and one of the differences is that the display device 100D furtherincludes a dielectric layer 148. In some embodiments, the dielectriclayer 148 is disposed between the color conversion layer and the lightfilter layer. For example, the dielectric layer 148 is disposed betweenthe blue light filter layer 106 and the blue color conversion layer 108in the corresponding blue pixel B. Similarly, the dielectric layer 148is disposed in the green pixel G or in the red pixel R. In someembodiments, the refractive index of the dielectric layer 148 is lessthan that of the color conversion layer. In some embodiments, therefractive index of the dielectric layer 148 is less than that of thelight filter layer. In some embodiments, the difference between therefractive index of the dielectric layer 148 (n1) and the refractiveindex of the color conversion layer (n2) or the refractive index of thelight filter layer (n3) is greater than or equivalent to 0.05, and lessthan or equivalent to 1 (0.05≤n2−n≤1≤1 or 0.05≤n3−n1≤1). For example,the difference of the refractive index between color conversion layer(e.g. the blue color conversion layer 108, the green color conversionlayer 112 or the red color conversion layer 116) and the dielectriclayer 148 is greater than or equivalent to 0.05, and less than orequivalent to 1, respectively.

When the refractive index of a dielectric layer is less than therefractive index of the light filter layer or the refractive index ofthe color conversion layer, the possibility of excitation of lightreturning to the color conversion layer is enhanced. Therefore, theefficiency of light conversion is enhanced. In some embodiments, thedielectric layer 148 includes, but is not limited to, AlGaN, GaN, SiO₂,optical resin, epoxy, silicone.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 7 can be replaced with the filling layer 138 shown in FIG.4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 7 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .In some embodiments, when the light shielding layer 120 and thelight-emitting diode 122 are replaced with the liquid-crystal displayelement 140, the adhesive layer 118 is not formed, and the scope ofdisclosure is not intended to be limiting.

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 8 , FIG. 8 is a cross-sectional view of adisplay device 100E in accordance with some embodiments of the presentdisclosure. The display device 100E may be similar to the display device100D, and one of the differences is that the yellow light filter layer110 disposed in the green pixel G is replaced with a green light filterlayer 150, and the yellow light filter layer 114 disposed in the redpixel R is replaced with a red light filter layer 152. As mentionedabove, the efficiency of the light conversion is enhanced when thedielectric layer is disposed between the light filter layer and thecolor conversion layer, so the colourimetric purity is enhanced bydisposing the green light filter layer 150 in the green pixel G, and thered light filter layer 152 in the red pixel R.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 8 can be replaced with the filling layer 138 shown in FIG.4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 8 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 9 , FIG. 9 is a cross-sectional view of adisplay device 100F in accordance with some embodiments of the presentdisclosure. The display device 100F may be similar to the display device100D, and one of the differences is that the dielectric layer 148 isdisposed between the light shielding layer 104 and the light shieldinglayer 120. As shown in FIG. 9 , the color conversion layers (e.g. theblue color conversion layer 108, the green color conversion layer 112and the red color conversion layer 116) can be disposed on thelight-emitting diode 122, and the color conversion layers are in directcontact with the light-emitting diode 122. As shown in FIG. 9 , the bluelight filter layer 106 and the blue color conversion layer 108 areseparated by the dielectric layer 148. The yellow light filter layer 110and the green color conversion layer 112 are separated by the dielectriclayer 148. Further, the yellow light filter layer 114 and the red colorconversion layer 116 are separated by the dielectric layer 148. In thisembodiment, the dielectric layer 148 may be a structure of a planelayer. The dielectric layer 148 is disposed on the surfaces of the bluecolor conversion layer 108, the green color conversion layer 112 and thered color conversion layer 116. In this embodiment, it is not necessaryto make the light shielding layer 120 or the light shielding layer 104separates the dielectric layer 148, respectively. In addition, thedielectric layer 148 is not necessary to be patterned, and the adhesivelayer 118 can be omitted. As a result, the process is simplified or thecost is reduced. In some embodiments, the dielectric layer 148 isdisposed on the substrate 102 on which the blue light filter layer 106,the yellow light filter layer 110, the yellow light filter layer 114 andthe light shielding layer 104 are formed. The light-emitting diodes 122(the blue color conversion layer 108, the green color conversion layer112 and the red color conversion layer 116 were previously disposed onthe light-emitting diodes 122 respectively) are disposed on thesubstrate 137. Next, the substrate 102 is combined with the substrate137, and the dielectric layer 148 may be disposed between the substrate102 and the substrate 137. As a result, the display device 100F iscreated.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 9 can be replaced with the filling layer 138 shown in FIG.4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 9 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 10 , FIG. 10 is a cross-sectional view ofa display device 100G in accordance with some embodiments of the presentdisclosure. The display device 100G may be similar to the display device100F, and one of the differences is that the yellow light filter layer110 disposed in the green pixel G is replaced with the green lightfilter layer 150, and the yellow light filter layer 114 disposed in thered pixel R is replaced with the red light filter layer 152.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 10 can be replaced with the filling layer 138 shown inFIG. 4 . In this embodiment, the portion of the dielectric layer 148corresponding to the blue pixel B is not formed. Namely, the dielectriclayer 148 is disposed in the corresponding green pixel G and the redpixel R. In some embodiments, the material of the filling layer 138 isthe same as or similar to that of the dielectric layer 148. In someembodiments, the refractive index of the material of the filling layer138 is different from the refractive index of the material of thedielectric layer 148. In some embodiments, the light shielding layer 120and the light-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 10 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 11 , FIG. 11 is a cross-sectional view ofa display device 100H in accordance with some embodiments of the presentdisclosure. The display device 100H may be similar to the display device100G, and one of the differences is that the dielectric layer 148 isreplaced with a spacer element 156 and air (or a vacuum layer) 158. Inother embodiments, the dielectric layer 148 is replaced with the spacerelement 156 and the air 158 and a spacer layer 154. As shown in FIG. 11, the spacer element 156 is disposed between the light shielding layer104 and the light shielding layer 120. The spacer element 156 may be aspacer controlling material (e.g. photo spacer). In addition, the spacerelement 156 may include, but is not limited to, glass, ceramic, plastic,other transparent or non-transparent material. In some embodiments, thematerial of the spacer element 156 is the same as or similar to thematerial of the light shielding layer 104. In some embodiments, thespacer element 156 substantially overlaps the light shielding layer 104or the light shielding layer 120 along a normal direction of thesubstrate 102. In some embodiments, the cross-sectional shape of spacerelement 156 is, but is not limited to, trapezoidal, circular,arc-shaped, rectangular or square. The spacer layer 154 (such as framelayer) is disposed outside of the spacer element 156 and used toseparate or package the blue pixel B, the green pixel G and the redpixel R, the light shielding layer 104 and the light shielding layer 120may be used to shield the elements or region which is not used todisplay colors in the display device 100H. For example, the lightshielding layer 104 and the light shielding layer 120 may be used toshield the data lines (not shown), scan lines (not shown) and TFTs (notshown).

In addition, the display device 100H further includes the air 158between the color conversion layer (e.g. the blue light filter layer106, the yellow light filter layer 110 and the yellow light filter layer114) and the light filter layer (e.g. the blue color conversion layer108, the green color conversion layer 112 and the red color conversionlayer 116), wherein the air 158 has lower refractive index (therefractive index of the air 158 is about 1), the possibility ofexcitation of light returning to the color conversion layer is enhanced.In addition, the material with the lower refractive index can be omittedso that the cost is reduced, or the process is simplified.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 11 can be replaced with the filling layer 138 shown inFIG. 4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 11 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 12 , FIG. 12 is a cross-sectional view ofa display device 100I in accordance with some embodiments of the presentdisclosure. The display device 100I may be similar to the display device100H, and one of the differences is that the yellow light filter layer110 disposed in the green pixel G is replaced with the green lightfilter layer 150, and the yellow light filter layer 114 disposed in thered pixel R is replaced with the red light filter layer 152.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 12 can be replaced with the filling layer 138 shown inFIG. 4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 12 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 13 , FIG. 13 is a cross-sectional view ofa display device 100J in accordance with some embodiments of the presentdisclosure. The display device 100J may be similar to the display device100D, and one of the differences is that the light filter layers are notformed in the corresponding blue pixel B, the green pixel G and the redpixel R. In this embodiment, the dielectric layer 148 is in directcontact with the substrate 102.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 13 can be replaced with the filling layer 138 shown inFIG. 4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 13 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 14 , FIG. 14 is a cross-sectional view ofa display device 100K in accordance with some embodiments of the presentdisclosure. The display device 100K may be similar to the display device100D, and one of the differences is that the blue light filter layer106, the yellow light filter layer 110 and the yellow light filter layer114 are replaced with a short wavelength filter layer 160. The shortwavelength filter layer 160 may shield wavelength of light shorter than430 nm, so a transmittance of light (wavelength shorter than 430 nm)through the short wavelength filter layer 160 is less than 5%. Namely,when light is converted to the color of blue light, green light, and redlight through the blue color conversion layer 108, the green colorconversion layer 112 and the red color conversion layer 116,respectively, these different color of lights further penetrate theshort wavelength filter layer 160 to filter out wavelength of lightshorter than 430 nm (e.g. ultraviolet or near ultraviolet).

In some embodiments, the short wavelength filter layer 160 can bereplaced with distributed Bragg reflector (DBR). The material of DBRincludes, but is not limited to, a nonmetal material, a dielectricmaterial, an optical fiber or other materials. DBR may be made ofmulti-layers of films with different refractive index, and DBR can beused as a waveguide.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 14 can be replaced with the filling layer 138 shown inFIG. 4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 14 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 15 , FIG. 15 is a cross-sectional view ofa display device 100L in accordance with some embodiments of the presentdisclosure. The display device 100L may be similar to the display device100K, and one of the differences is that the short wavelength filterlayer 160 is disposed on the light shielding layer 104, and between thelight shielding layer 104 and the substrate 102. In this embodiment, theshort wavelength filter layer 160 is disposed over the light shieldinglayer 104 and the dielectric layer 148.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 15 can be replaced with the filling layer 138 shown inFIG. 4 . In some embodiments, the light shielding layer 120 and thelight-emitting diode 122 (which includes all the elements of thelight-emitting diode 122 shown in FIG. 2 ) shown in FIG. 15 can bereplaced with the liquid-crystal display element 140 shown in FIG. 6 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 16 , FIG. 16 is a cross-sectional view ofa display device 100M in accordance with some embodiments of the presentdisclosure. The display device 100M may be similar to the display device100E, and one of the differences is that the color conversion layer(e.g. the blue color conversion layer 108, the green color conversionlayer 112 and the red color conversion layer 116) is covered by thedielectric layer 148. As shown in FIG. 16 , the dielectric layer 148 isfurther disposed on sidewalls of the blue color conversion layer 108,the green color conversion layer 112 or the red color conversion layer116. Namely, the area of the dielectric layer 148 projecting onto thesubstrate 102 of display device is greater than the area of the bluecolor conversion layer 108, the green color conversion layer 112 and thered color conversion layer 116 projecting onto the substrate 102 alongthe normal direction of the substrate 102 respectively. In other words,the blue color conversion layer 108, the green color conversion layer112 and the red color conversion layer 116 is covered by the dielectriclayers 148 respectively, and the dielectric layers 148 can be in contactwith two side surface of color conversion layers (such as the blue colorconversion layer 108, the green color conversion layer 112 and the redcolor conversion layer 116) respectively, for example. Because of largercontacting area between the dielectric layer 148 and the blue colorconversion layer 108, the green color conversion layer 112 and the redcolor conversion layer 116, the possibility of excitation of lightreturning to the color conversion layer is enhanced.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 16 can be replaced with the filling layer 138 shown inFIG. 4 .

Many variations and/or modifications can be made to embodiments of thedisclosure. Referring to FIG. 17 , FIG. 17 is a cross-sectional view ofa display device 100N in accordance with some embodiments of the presentdisclosure. The display device 100N may be similar to the display device100E, and one of the differences is that the display device 100N furtherincludes a total reflection layer 162 disposed between the lightshielding layer 104 and the adhesive layer 118. As shown in FIG. 17 ,the total reflection layer 162 completely or partially overlaps thelight shielding layer 104 and the light shielding layer 120 along thenormal direction of the substrate 102. The material of the totalreflection layer 162 includes, but is not limited to, metal (e.g. Al,Ag, Cu, Ti, other metal, or metal alloy), nonmetal, dielectric materialor white photoresist. In some embodiments, the material of the totalreflection layer 162 includes, but is not limited to, dielectricmaterials such as SiO₂ or TiO₂. The refractive index of the totalreflection layer 162 may be adjusted in accordance with the processcondition or the composition of the material, and the scope ofdisclosure is not intended to be limiting.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the blue color conversion layer 108shown in FIG. 17 can be replaced with the filling layer 138 shown inFIG. 4 .

Referring to FIGS. 18A and 18B, FIGS. 18A and 18B are cross-sectionalviews of a process for forming a material layer 204 between the spacerlayers 202 in accordance with some embodiments of the presentdisclosure. When an inkjet printing process is performed, there is aproblem of non-uniform thickness of the material layer formed by inkjetprinting process due to different surface tension of the sprayedmaterial between two surfaces of different material. In some cases, themiddle portion of the material layer protrudes, and two side portions ofthe material layer dent. In other cases, the middle portion of thematerial layer dents, and two side portions of the material layerprotrude. In order to solve the issue of non-uniform thickness of thematerial layer, a modification is performed on the material being incontact with the sprayed material. As a result, the contact anglebetween the sprayed material and the material being contact with it canbe controlled in a suitable range. Therefore, the uniformity of thesprayed material is enhanced. In some embodiments, the material of thespacer layer 202 has a contact angle to water in a range of about 90° toabout 150°. In some embodiments, the spacer layer 202 (such as theshielding layer) contains fluorine elements or function groups withfluorine (F). In some embodiments, the surface or entire of the spacerlayer 202 contains fluorine (F) elements or function groups withfluorine (F). In some embodiments, the spacer layer 202 is a polymeradded with fluorine (F) element, and therefore the spacer layer 202forms a polymer material containing fluorine (F). In other embodiment,the surface or entire of the spacer layer 202 contains other suitableelements so that the spacer layer 202 has a contact angle to water in arange of about 90° to about 150°. The “contact angle to water” can bemeasured by dropping a water drop on the spacer layer 202 andsubsequently using a contact angle meter to measure the contact anglebetween the spacer layer 202 and the water drop.

In some embodiments, as shown in FIG. 18A, a substrate 200 is provided.The substrate 200 may such as a board, an element or a structure layer.When the substrate 200 is the board, the substrate 200 may include aglass board, a ceramic board, a plastic board or another applicabletransparent board.

As shown in FIG. 18A, the spacer layer 202 is formed on the substrate200. Since the surface or entire of the spacer layer 202 has fluorine(F) elements or functional groups containing fluorine (F), the surfaceof the spacer layer 202 is hydrophobic. As a result, the contact anglebetween the surface of the spacer layer 202 and the sprayed materialvaries according to the change of the surface tension between thesurface of the spacer layer 202 and the sprayed material. In thisembodiment, the contact angle means that the angle between the spacerlayer 202 and the sprayed material, the sprayed material is not baked ordealt with by subsequent process. In some embodiments, the contact anglebetween the spacer layer 202 and the sprayed material changes when thespacer layer 202 is baked or dealt with by subsequent process, and thescope of disclosure is not intended to be limiting.

When the surface or the entire of the spacer layer 202 is modified, thecontact angle between the spacer layer 202 and solvent (such as water)is changed. For example, when there is no fluorine (F) element orfunctional group containing fluorine (F) on the surface or entire of thespacer layer 202, the contact angle between the surface of the spacerlayer 202 and water is within a range of about 0° to about 80°. In someembodiments, when there are fluorine (F) elements or functional groupscontaining fluorine (F) on the surface or entire of the spacer layer202, the contact angle between the surface of the spacer layer 202 andwater is within a range of about 90° to about 150°.

After the modification of the surface or entire of the spacer layer 202,the spacer layer 202 has a contact angle to water in a range of about90° to about 150°. As a result, the uniformity of the thickness of thematerial layer formed on the substrate 200 and between two adjacentspacer layers 202 is enhanced by inkjet printing process.

In some embodiments, referring to FIG. 18B, when the inkjet process isperformed, a sprayed material 402 is sprayed to the substrate 200 by anozzle 400 so that the material layer 204 is formed on the substrate 200between two adjacent spacer layers 202. As shown in FIG. 18B, when thesurface or entire of the spacer layer 202 is modified, the contact angleθ between the spacer layer 202 and the material layer 204 is adjusted.The material layer 204 has a planar surface.

In some embodiments, the spacer layer 202 may be, but is not limited to,such as the light shielding layer 104 or the total reflection layer 162shown in the embodiments illustrated in FIGS. 1-17 . The material layer204 may be, but is not limited to, such as the blue light filter layer106, the blue color conversion layer 108, the yellow light filter layer110, the green color conversion layer 112, the yellow light filter layer114, the red color conversion layer 116, the dielectric layer 148, thegreen light filter layer 150 or the red light filter layer 152 shown inthe embodiments illustrated in FIGS. 1-17 . In some embodiments, when itis necessary to form the color conversion layer after formation of thedielectric layer, the dielectric layer can be regarded as anothermaterial which is in contact with the sprayed material (e.g. the colorconversion layer).

Referring to FIGS. 19A-19C, FIGS. 19A-19C are cross-sectional views of aprocess for forming the material layer 204 between the spacer layers 202in accordance with some embodiments of the present disclosure. As shownin FIG. 19A, a surface of a spacer layer 202 does not contain fluorine(F), the spacer layer 202 is formed on the substrate 200. Next, a bottomsurface of a bottom layer 206 contains fluorine (F), bottom layer 206 isformed on the substrate 200 and between two adjacent spacer layers 202.The bottom layer 206 may be, but is not limited to, a substrate of thedisplay device can contain fluorine (F), or a surface of the substrateof the display device contains a dielectric material with fluorine (F).

Next, in some embodiments, a plasma process 208 is performed on anentire structure containing the spacer layer 202 and the bottom layer206 shown in FIG. 19B. In some embodiments, the plasma process 208includes, but is not limited to, implanting CF₄, CH₃F, CH₂F₂, other gascontaining fluorine (F) or materials with suitable elements. As shown inFIG. 19B, after the plasma process 208 is performed, fluorine (F)elements or functional groups on the surface of the bottom layer 206 aretransferred to the surface (e.g. top surface or side surface) of thespacer layer 202.

In some embodiments, referring to FIG. 19C, the inkjet process isperformed, and the sprayed material 402 is sprayed or coated on thesubstrate 200 through the nozzle 400. As a result, the material layer204 is formed on the bottom layer 206 and two adjacent spacer layers202.

In some embodiments, the spacer layer 202 may be, but is not limited to,such as the light shielding layer 104 or the total reflection layer 162shown in the embodiments illustrated in FIGS. 1-17 . The bottom layer206 may be, but is not limited to, a blue light filter layer 106, ayellow light filter layer 110, a yellow light filter layer 114, adielectric layer 148, a green light filter layer 150 or a red lightfilter layer 152, as shown in the embodiments illustrated in FIGS. 1-17. The material layer 204 may be, but is not limited to, such as the bluecolor conversion layer 108, the green color conversion layer 112 or thered color conversion layer 116 shown in the embodiments illustrated inFIGS. 1-17 in accordance with the sequence of manufacturing.

In this embodiment, a color conversion layer, a light filter layer, or adielectric layer, which the surface contains fluorine (F), and fluorine(F) may transfer from the color conversion layer, the light filterlayer, or the dielectric layer to the surface of the light shieldinglayer 104 or the total reflection layer 162 by a plasma process.

Referring to FIGS. 20A-20B, FIGS. 20A-20B are cross-sectional views of aprocess for forming the material layer 204 between the spacer layers 202in accordance with some embodiments of the present disclosure. As shownin FIG. 20A, the surface of the spacer layer 202 does not containfluorine (F), the spacer layer 202 is formed on the substrate 200. Next,a coating layer 212 is formed on top surface of the spacer layer 202 orside surfaces of the spacer layer 202. In some embodiments, the surfaceof the coating layer 212 is a polymer material with fluorine (F), andthe spacer layer 202 is a monomer or polymer material without fluorine(F). After the formation of the coating layer 212, the outer surfaces ofthe spacer layer 202 contain fluorine (F) by bonding between the coatinglayer 212 and the spacer layer 202, and the scope of disclosure is notintended to be limiting.

As mentioned above, the spacer layer 202 reacts or bonds with thecoating layer 212 to form a spacer structure 210. The contact anglebetween the spacer structure 210 and solvent can be adjusted by forminga coating layer 212, the surface of the coating layer 212 containsfluorine (F), on the spacer layer 202 to form the spacer structure 210.In some embodiments, the contact angle between the spacer structure 210and water is within a range of about 90° to about 150°.

In some embodiments, referring to FIG. 20B, the inkjet process isperformed, and the sprayed material 402 is sprayed on the substrate 200through the nozzle 400. As a result, the material layer 204 is formed onthe substrate 200 and two adjacent spacer layers 202.

In some embodiments, the light shielding layer 104, the total reflectionlayer 162 or a combination thereof shown in the embodiments illustratedin FIGS. 1-17 form the spacer structure which contains fluorine (F) onits surface. The material layer 204 may be, but is not limited to, suchas the blue light filter layer 106, the blue color conversion layer 108,the yellow light filter layer 110, the green color conversion layer 112,the yellow light filter layer 114, the red color conversion layer 116,the dielectric layer 148, the green light filter layer 150 or the redlight filter layer 152 shown in the embodiments illustrated in FIGS.1-17 .

The embodiments shown in FIGS. 18A, 18B, 19A-19C and 20A-20B formfluorine (F) on the spacer layer 202 or the spacer structure 210 toadjust the contact angle of the spacer layer 202 or the spacer structure210 to water. However, the scope of disclosure is not intended to belimiting to fluorine (F). The contact angle of the spacer layer 202 orthe spacer structure 210 to water may be in a range of about 90° toabout 150° by forming other elements on the surface of the spacer layer202 or the spacer structure 210.

In addition, the volume of sprayed or coated materials by differentnozzles may be different than each other due to the difference betweeneach of the nozzles. Therefore, if the sprayed material is sprayed intopixels in the same column or row by the same nozzle, there is a problemof linear mura in the color conversion layer, the dielectric layer orthe light filter layer. In some embodiments, it combines mosaic printingand mixing nozzle printing to alleviate the mura problem.

More specifically, mosaic printing means using a plurality of nozzles tospray or coat the material into different columns or rows randomly,rather than using the same nozzle to spray or coat the material into thesame column or row. As a result, linear (column or row) mura caused bydifference between nozzles is prevented.

Mixing nozzle printing means using two or more nozzles to spray or coatmaterial into one pixel to form the color conversion layer, thedielectric layer or the light filter layer. As first, volumes sprayed bydifferent nozzles are measured, respectively. Next, group and combinenozzles according to the above measured volumes. For example, two ormore nozzles may be used to spray the material into one pixel.Similarly, different nozzles are used to spray the material intodifferent pixels. As a result, the thicknesses of different pixels aresubstantially equal. In other embodiments, substantially equalthicknesses of the color conversion layer, the dielectric layer or thelight filter layer are formed in different pixels by combining mosaicprinting and mixing nozzle printing.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. For example, it will be readily understood by thoseskilled in the art that many of the features, functions, processes, andmaterials described herein may be varied while remaining within thescope of the present disclosure. Moreover, the scope of the presentapplication is not intended to be limited to the particular embodimentsof the process, machine, manufacture, composition of matter, means,methods and steps described in the specification. As one of ordinaryskill in the art will readily appreciate from the disclosure of thepresent disclosure, processes, machines, manufacture, compositions ofmatter, means, methods, or steps, presently existing or later to bedeveloped, that perform substantially the same function or achievesubstantially the same result as the corresponding embodiments describedherein may be utilized according to the present disclosure. Accordingly,the appended claims are intended to include within their scope suchprocesses, machines, manufacture, compositions of matter, means,methods, or steps.

What is claimed is:
 1. A display device, comprising: a substrate; aplurality of pixels disposed on the substrate, wherein one of theplurality of pixels comprises a first light filter layer; a first lightshielding layer defining a plurality of openings, wherein the firstlight filter layer is disposed in one of the plurality of openings; asecond light shielding layer disposed on the substrate and at leastpartially overlapped with the first light shielding layer, and thesecond light shielding layer defining a plurality of another openings; aplurality of light emitting diodes disposed in the another plurality ofanother openings; and a material layer disposed between the first lightshielding layer and the second light shielding layer, wherein in adirection parallel to an upper surface of the substrate, the secondlight shielding layer overlaps the plurality of light emitting diodes,wherein the material layer overlaps with at least two of the pluralityof light emitting diodes, and the material layer comprises silicon oxidematerial or oxygen-containing material.
 2. The display device of claim1, further comprising: a spacer element disposed between the first lightshielding layer and the second light shielding layer.
 3. The displaydevice of claim 2, wherein a material of the spacer element is differentfrom a material of the first light shielding layer.
 4. The displaydevice of claim 1, wherein the first shielding layer contains fluorineelements or function groups with fluorine.
 5. The display device ofclaim 1, wherein the one of the plurality of pixels further comprises acolor conversion layer, and the color conversion layer is disposedbetween the first light filter layer and one of the plurality of lightemitting diodes.
 6. The display device of claim 5, wherein in across-sectional view, a minimum width of the first light filter layer isdifferent from a minimum width of the color conversion layer.
 7. Thedisplay device of claim 1, further comprising an adhesive layer disposedbetween the first light shielding layer and the second light shieldinglayer.
 8. The display device of claim 7, wherein the adhesive layer isdisposed between the first light filter layer and one of the pluralityof light emitting diodes.
 9. The display device of claim 1, wherein theplurality of light emitting diodes do not contact the second lightshielding layer.